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DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
Features
V (BR)DSS
R DS(on)
I D max
T A = 25°C (Note 5)
?
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
? Low R DS(ON) - minimizes conduction losses
30V
12.5m Ω @ V GS = 10V
14.8m Ω @ V GS = 4.5V
11.7A
10.8A
?
?
Low V SD - reducing the losses due to body diode conduction
Low Q rr - lower Q rr of the integrated Schottky reduces body
diode switching losses
?
?
Low gate capacitance (Q g /Q gs ) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – I AR and E AR rated
?
?
?
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
DC-DC Converters
Power management functions
Top View
?
?
S
S
S
G
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
D
D
D
D
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG4710SSS-13
1. No purposefully added lead.
Case
SO-8
Packaging
2500 / Tape & Reel
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
G4710SS
Part no.
YY WW
Xth week: 01 ~ 53
Year: “09” = 2009
1
4
Year: “10” = 2010
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
1 of 6
www.diodes.com
November 2010
? Diodes Incorporated
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